Vishay Siliconix - IRFD010

KEY Part #: K6414892

[12598stk lager]


    Hlutanúmer:
    IRFD010
    Framleiðandi:
    Vishay Siliconix
    Nákvæm lýsing:
    MOSFET N-CH 50V 1.7A 4-DIP.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Thyristors - SCR, Kerfisstjóratæki, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Smára - tvíhverfa (BJT) - fylki, forspeglast and Díóða - Zener - Fylki ...
    Samkeppnisforskot:
    We specialize in Vishay Siliconix IRFD010 electronic components. IRFD010 can be shipped within 24 hours after order. If you have any demands for IRFD010, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFD010 Vörueiginleikar

    Hlutanúmer : IRFD010
    Framleiðandi : Vishay Siliconix
    Lýsing : MOSFET N-CH 50V 1.7A 4-DIP
    Röð : -
    Hluti staða : Obsolete
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 50V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 1.7A (Tc)
    Drifspenna (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 200 mOhm @ 860mA, 10V
    Vgs (th) (Max) @ kt : 4V @ 250µA
    Hliðargjald (Qg) (Max) @ Vgs : 13nC @ 10V
    Vgs (hámark) : ±20V
    Inntaksrýmd (Ciss) (Max) @ Vds : 250pF @ 25V
    FET lögun : -
    Dreifing orku (Max) : 1W (Tc)
    Vinnuhitastig : -55°C ~ 150°C (TJ)
    Festingargerð : Through Hole
    Birgir tæki pakki : 4-DIP, Hexdip, HVMDIP
    Pakki / mál : 4-DIP (0.300", 7.62mm)

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