SISH108DN-T1-GE3 Verðlagning (USD) [465511stk lager]
- 1 pcs$0.07946
- Hlutanúmer:
- SISH108DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 20 V POWERPAK 1212.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Single, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - RF, Transistors - Forritanleg sameining, Díóða - Zener - Stakur, Thyristors - SCR and Transistors - Tvíhverfur (BJT) - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SISH108DN-T1-GE3 electronic components. SISH108DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH108DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH108DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SISH108DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 20 V POWERPAK 1212
Röð :
TrenchFET® Gen II
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
14A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.9 mOhm @ 22A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
30nC @ 4.5V
Vgs (hámark) :
±16V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
-
Dreifing orku (Max) :
1.5W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8SH
Pakki / mál :
PowerPAK® 1212-8SH
Nýjustu fréttir
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