[4108stk lager]
- Hlutanúmer:
- IPG20N06S415ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 8TDSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Transistors - sérstök tilgangur, Thyristors - SCRs - mát, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPG20N06S415ATMA1 electronic components. IPG20N06S415ATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N06S415ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N06S415ATMA1 Vörueiginleikar
Hlutanúmer :
IPG20N06S415ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 8TDSON
Röð :
Automotive, AEC-Q101, OptiMOS™
Hluti staða :
Discontinued at Digi-Key
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
15.5 mOhm @ 17A, 10V
Vgs (th) (Max) @ kt :
4V @ 20µA
Hliðargjald (Qg) (Max) @ Vgs :
29nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
2260pF @ 25V
Afl - Max :
50W
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerVDFN
Birgir tæki pakki :
PG-TDSON-8-4
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