SQS411ENW-T1_GE3 Verðlagning (USD) [250794stk lager]
- 1 pcs$0.14748
- Hlutanúmer:
- SQS411ENW-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 40V PPAK 1212-8W.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Díóða - leiðréttingar - fylki, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - Forritanleg sameining, Transistors - IGBTs - Single, Díóða - leiðréttingar - stakir and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQS411ENW-T1_GE3 electronic components. SQS411ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS411ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS411ENW-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQS411ENW-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 40V PPAK 1212-8W
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
16A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
27.3 mOhm @ 8A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3191pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
53.6W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8W
Pakki / mál :
PowerPAK® 1212-8W
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