SI8429DB-T1-E1 Verðlagning (USD) [202426stk lager]
- 1 pcs$0.18363
- 3,000 pcs$0.18272
- Hlutanúmer:
- SI8429DB-T1-E1
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 8V 11.7A 2X2 4-MFP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Díóða - Zener - Fylki, Thyristors - TRIACs, Kerfisstjóratæki, Transistors - IGBTs - Arrays, Díóða - Zener - Stakur, Díóða - RF and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI8429DB-T1-E1 electronic components. SI8429DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8429DB-T1-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8429DB-T1-E1 Vörueiginleikar
Hlutanúmer :
SI8429DB-T1-E1
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 8V 11.7A 2X2 4-MFP
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
8V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11.7A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
35 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ kt :
800mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
26nC @ 5V
Vgs (hámark) :
±5V
Inntaksrýmd (Ciss) (Max) @ Vds :
1640pF @ 4V
FET lögun :
-
Dreifing orku (Max) :
2.77W (Ta), 6.25W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
4-Microfoot
Pakki / mál :
4-XFBGA, CSPBGA
Nýjustu fréttir
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