SISS32DN-T1-GE3 Verðlagning (USD) [152066stk lager]
- 1 pcs$0.24323
- Hlutanúmer:
- SISS32DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 80-V POWERPAK 1212.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Thyristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Díóða - leiðréttingar - stakir, Transistors - JFETs and Transistors - Tvíhverfur (BJT) - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SISS32DN-T1-GE3 electronic components. SISS32DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS32DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS32DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SISS32DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 80-V POWERPAK 1212
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
17.4A (Ta), 63A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
3.8V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1930pF @ 40V
FET lögun :
-
Dreifing orku (Max) :
5W (Ta), 65.7W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8S
Pakki / mál :
PowerPAK® 1212-8S
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