IPB042N10N3GE8187ATMA1 Verðlagning (USD) [61829stk lager]
- 1 pcs$0.63555
- 1,000 pcs$0.63239
- Hlutanúmer:
- IPB042N10N3GE8187ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 100A TO263-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Transistors - Forritanleg sameining, Transistors - IGBTs - Single, Díóða - Zener - Fylki, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB042N10N3GE8187ATMA1 electronic components. IPB042N10N3GE8187ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB042N10N3GE8187ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB042N10N3GE8187ATMA1 Vörueiginleikar
Hlutanúmer :
IPB042N10N3GE8187ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 100A TO263-3
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
4.2 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 150µA
Hliðargjald (Qg) (Max) @ Vgs :
117nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
8410pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
214W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263AB)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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