[13434stk lager]
- Hlutanúmer:
- NVB5860NT4G
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- MOSFET N-CH 60V 169A D2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Single, Díóða - breytileg getu, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - RF and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor NVB5860NT4G electronic components. NVB5860NT4G can be shipped within 24 hours after order. If you have any demands for NVB5860NT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVB5860NT4G Vörueiginleikar
Hlutanúmer :
NVB5860NT4G
Framleiðandi :
ON Semiconductor
Lýsing :
MOSFET N-CH 60V 169A D2PAK
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
220A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 mOhm @ 75A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
10760pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
283W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D2PAK-3
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nýjustu fréttir
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