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Ef staðsetning þín er ekki skráð skaltu velja eitt af eftirfarandi:

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  5. FDB0260N1007L

ON Semiconductor - FDB0260N1007L

KEY Part #: K6392724

FDB0260N1007L Verðlagning (USD) [23921stk lager]

  • 1 pcs$1.73154
  • 800 pcs$1.72292
Hlutanúmer:
FDB0260N1007L
Framleiðandi:
ON Semiconductor
Nákvæm lýsing:
MOSFET N-CH 100V 200A D2PAK.
Venjulegur framleiðslutími framleiðanda:
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - RF, Transistors - sérstök tilgangur, Díóða - RF, Transistors - IGBTs - Arrays, Kerfisstjóratæki and Díóða - Zener - Stakur ...
Samkeppnisforskot:
We specialize in ON Semiconductor FDB0260N1007L electronic components. FDB0260N1007L can be shipped within 24 hours after order. If you have any demands for FDB0260N1007L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB0260N1007L Vörueiginleikar

Hlutanúmer : FDB0260N1007L
Framleiðandi : ON Semiconductor
Lýsing : MOSFET N-CH 100V 200A D2PAK
Röð : PowerTrench®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 200A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 27A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 118nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 8545pF @ 50V
FET lögun : -
Dreifing orku (Max) : 3.8W (Ta), 250W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK (TO-263)
Pakki / mál : TO-263-7, D²Pak (6 Leads + Tab)

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