TK10J80E,S1E Verðlagning (USD) [37612stk lager]
- 1 pcs$1.21125
- 25 pcs$1.20523
- Hlutanúmer:
- TK10J80E,S1E
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N-CH 800V TO-3PN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Thyristors - TRIACs, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Single, Díóða - breytileg getu, Transistors - IGBTs - Single, Transistors - IGBTs - mát and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TK10J80E,S1E electronic components. TK10J80E,S1E can be shipped within 24 hours after order. If you have any demands for TK10J80E,S1E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10J80E,S1E Vörueiginleikar
Hlutanúmer :
TK10J80E,S1E
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N-CH 800V TO-3PN
Röð :
π-MOSVIII
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
2000pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
250W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-3P(N)
Pakki / mál :
TO-3P-3, SC-65-3
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