SIHU7N60E-GE3 Verðlagning (USD) [106739stk lager]
- 1 pcs$0.34825
- 3,000 pcs$0.34652
- Hlutanúmer:
- SIHU7N60E-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 600V 7A TO-251.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs, Transistors - IGBTs - Arrays, Smára - tvíhverfa (BJT) - fylki, Transistors - Forritanleg sameining and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHU7N60E-GE3 electronic components. SIHU7N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU7N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHU7N60E-GE3 Vörueiginleikar
Hlutanúmer :
SIHU7N60E-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 600V 7A TO-251
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
680pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
78W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
I-PAK
Pakki / mál :
TO-251-3 Short Leads, IPak, TO-251AA
Nýjustu fréttir
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