SISH407DN-T1-GE3 Verðlagning (USD) [245218stk lager]
- 1 pcs$0.15084
- Hlutanúmer:
- SISH407DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 20V POWERPAK 1212.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Kerfisstjóratæki, Smára - tvíhverfa (BJT) - fylki, Transistors - Forritanleg sameining and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SISH407DN-T1-GE3 electronic components. SISH407DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISH407DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISH407DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SISH407DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 20V POWERPAK 1212
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
15.4A (Ta), 25A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 15.3A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
93.8nC @ 8V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
2760pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
3.6W (Ta), 33W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8SH
Pakki / mál :
PowerPAK® 1212-8SH
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