SQJ958EP-T1_GE3 Verðlagning (USD) [194426stk lager]
- 1 pcs$0.19024
- Hlutanúmer:
- SQJ958EP-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2 N-CH 60V POWERPAK SO8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Díóða - leiðréttingar - stakir, Díóða - leiðréttingar - fylki, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - mát and Díóða - Zener - Stakur ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQJ958EP-T1_GE3 electronic components. SQJ958EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ958EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ958EP-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQJ958EP-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2 N-CH 60V POWERPAK SO8
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
20A (Tc)
Rds On (Max) @ Id, Vgs :
34.9 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
23nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
1075pF @ 30V
Afl - Max :
35W
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® SO-8 Dual
Birgir tæki pakki :
PowerPAK® SO-8 Dual
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