SIS888DN-T1-GE3 Verðlagning (USD) [120687stk lager]
- 1 pcs$0.30647
- 3,000 pcs$0.28779
- Hlutanúmer:
- SIS888DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 150V 20.2A 1212-8S.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Díóða - leiðréttingar - stakir, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - fylki, Transistors - sérstök tilgangur, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - RF and Díóða - Zener - Stakur ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIS888DN-T1-GE3 electronic components. SIS888DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS888DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS888DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIS888DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 150V 20.2A 1212-8S
Röð :
ThunderFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
150V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
20.2A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
58 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
4.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
420pF @ 75V
FET lögun :
-
Dreifing orku (Max) :
52W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TA)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 1212-8S (3.3x3.3)
Pakki / mál :
PowerPAK® 1212-8S
Nýjustu fréttir
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