Infineon Technologies - IPD50R1K4CEBTMA1

KEY Part #: K6403872

IPD50R1K4CEBTMA1 Verðlagning (USD) [2208stk lager]

  • 2,500 pcs$0.07627

Hlutanúmer:
IPD50R1K4CEBTMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 500V 3.1A PG-TO-252.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Eitt ár
Flís frá:
Hong Kong
RoHS:
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Samkeppnisforskot:
We specialize in Infineon Technologies IPD50R1K4CEBTMA1 electronic components. IPD50R1K4CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD50R1K4CEBTMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD50R1K4CEBTMA1 Vörueiginleikar

Hlutanúmer : IPD50R1K4CEBTMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 500V 3.1A PG-TO-252
Röð : CoolMOS™ CE
Hluti staða : Obsolete
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 500V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 3.1A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 13V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 900mA, 13V
Vgs (th) (Max) @ kt : 3.5V @ 70µA
Hliðargjald (Qg) (Max) @ Vgs : 1nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 178pF @ 100V
FET lögun : -
Dreifing orku (Max) : 25W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO252-3
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

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