Infineon Technologies - IPP057N06N3GXKSA1

KEY Part #: K6399569

IPP057N06N3GXKSA1 Verðlagning (USD) [57728stk lager]

  • 1 pcs$0.61879
  • 10 pcs$0.54729
  • 100 pcs$0.43269
  • 500 pcs$0.31741
  • 1,000 pcs$0.25059

Hlutanúmer:
IPP057N06N3GXKSA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 60V 80A TO220-3.
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - sérstök tilgangur, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Díóða - Zener - Stakur, Transistors - Forritanleg sameining and Transistors - Tvíhverfur (BJT) - Single ...
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We specialize in Infineon Technologies IPP057N06N3GXKSA1 electronic components. IPP057N06N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP057N06N3GXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP057N06N3GXKSA1 Vörueiginleikar

Hlutanúmer : IPP057N06N3GXKSA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 60V 80A TO220-3
Röð : OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.7 mOhm @ 80A, 10V
Vgs (th) (Max) @ kt : 4V @ 58µA
Hliðargjald (Qg) (Max) @ Vgs : 82nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 6600pF @ 30V
FET lögun : -
Dreifing orku (Max) : 115W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : PG-TO220-3
Pakki / mál : TO-220-3

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