SQJ412EP-T1_GE3 Verðlagning (USD) [74217stk lager]
- 1 pcs$0.52684
- 3,000 pcs$0.44424
- Hlutanúmer:
- SQJ412EP-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 40V 32A PPAK SO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Kerfisstjóratæki, Thyristors - SCR, Díóða - RF, Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - mát and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQJ412EP-T1_GE3 electronic components. SQJ412EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ412EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ412EP-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQJ412EP-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 40V 32A PPAK SO-8
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
32A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.1 mOhm @ 10.3A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
5950pF @ 20V
FET lögun :
-
Dreifing orku (Max) :
83W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SO-8
Pakki / mál :
PowerPAK® SO-8
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