Infineon Technologies - IPB014N06NATMA1

KEY Part #: K6417877

IPB014N06NATMA1 Verðlagning (USD) [44528stk lager]

  • 1 pcs$0.87811
  • 1,000 pcs$0.76711

Hlutanúmer:
IPB014N06NATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 60V 34A TO263-7.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - Arrays, Díóða - RF, Díóða - Zener - Stakur, Díóða - breytileg getu, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Transistors - Tvíhverfur (BJT) - Single ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB014N06NATMA1 Vörueiginleikar

Hlutanúmer : IPB014N06NATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 60V 34A TO263-7
Röð : OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 34A (Ta), 180A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 1.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt : 2.8V @ 143µA
Hliðargjald (Qg) (Max) @ Vgs : 106nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 7800pF @ 30V
FET lögun : -
Dreifing orku (Max) : 3W (Ta), 214W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO263-7
Pakki / mál : TO-263-7, D²Pak (6 Leads + Tab)

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