Lýsing :
GAN TRANS ASYMMETRICAL HALF BRID
FET gerð :
2 N-Channel (Half Bridge)
FET lögun :
GaNFET (Gallium Nitride)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
16A (Ta)
Rds On (Max) @ Id, Vgs :
19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs (th) (Max) @ kt :
2.5V @ 5mA
Hliðargjald (Qg) (Max) @ Vgs :
2.2nC @ 5V, 5.7nC @ 5V
Inntaksrýmd (Ciss) (Max) @ Vds :
230pF @ 15V, 590pF @ 15V
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount