[13286stk lager]
- Hlutanúmer:
- IRF6709S2TRPBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 12A DIRECTFET-S1.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Díóða - Zener - Stakur, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - Single, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF6709S2TRPBF electronic components. IRF6709S2TRPBF can be shipped within 24 hours after order. If you have any demands for IRF6709S2TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6709S2TRPBF Vörueiginleikar
Hlutanúmer :
IRF6709S2TRPBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 12A DIRECTFET-S1
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Ta), 39A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.8 mOhm @ 12A, 10V
Vgs (th) (Max) @ kt :
2.35V @ 25µA
Hliðargjald (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1010pF @ 13V
FET lögun :
-
Dreifing orku (Max) :
1.8W (Ta), 21W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
DIRECTFET S1
Pakki / mál :
DirectFET™ Isometric S1
Nýjustu fréttir
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