IPN60R600P7SATMA1 Verðlagning (USD) [269785stk lager]
- 1 pcs$0.13710
- 3,000 pcs$0.12389
- Hlutanúmer:
- IPN60R600P7SATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CHANNEL 600V 6A SOT223.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Forritanleg sameining, Thyristors - TRIACs, Díóða - RF, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir and Transistors - Tvíhverfur (BJT) - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPN60R600P7SATMA1 electronic components. IPN60R600P7SATMA1 can be shipped within 24 hours after order. If you have any demands for IPN60R600P7SATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN60R600P7SATMA1 Vörueiginleikar
Hlutanúmer :
IPN60R600P7SATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CHANNEL 600V 6A SOT223
Röð :
CoolMOS™ P7
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 1.7A, 10V
Vgs (th) (Max) @ kt :
4V @ 80µA
Hliðargjald (Qg) (Max) @ Vgs :
9nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
363pF @ 400V
FET lögun :
-
Dreifing orku (Max) :
7W (Tc)
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-SOT223
Pakki / mál :
TO-261-3
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