SI1012R-T1-GE3 Verðlagning (USD) [610452stk lager]
- 1 pcs$0.06059
- 3,000 pcs$0.05168
- Hlutanúmer:
- SI1012R-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 500MA SC-75A.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - RF, Díóða - breytileg getu, Díóða - Zener - Stakur and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI1012R-T1-GE3 electronic components. SI1012R-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1012R-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1012R-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI1012R-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 500MA SC-75A
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
500mA (Ta)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
700 mOhm @ 600mA, 4.5V
Vgs (th) (Max) @ kt :
900mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
0.75nC @ 4.5V
Vgs (hámark) :
±6V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
-
Dreifing orku (Max) :
150mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SC-75A
Pakki / mál :
SC-75A
Nýjustu fréttir
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