[12335stk lager]
- Hlutanúmer:
- STB25NM60N-1
- Framleiðandi:
- STMicroelectronics
- Nákvæm lýsing:
- MOSFET N-CH 600V 21A I2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Díóða - breytileg getu, Díóða - leiðréttingar - stakir, Thyristors - SCRs - mát, Díóða - RF, Transistors - IGBTs - Single, Transistors - Forritanleg sameining and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in STMicroelectronics STB25NM60N-1 electronic components. STB25NM60N-1 can be shipped within 24 hours after order. If you have any demands for STB25NM60N-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB25NM60N-1 Vörueiginleikar
Hlutanúmer :
STB25NM60N-1
Framleiðandi :
STMicroelectronics
Lýsing :
MOSFET N-CH 600V 21A I2PAK
Röð :
MDmesh™ II
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
21A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
84nC @ 10V
Vgs (hámark) :
±25V
Inntaksrýmd (Ciss) (Max) @ Vds :
2400pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
160W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
I2PAK
Pakki / mál :
TO-262-3 Long Leads, I²Pak, TO-262AA
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