Infineon Technologies - IPB039N10N3GE8187ATMA1

KEY Part #: K6418225

IPB039N10N3GE8187ATMA1 Verðlagning (USD) [55877stk lager]

  • 1 pcs$0.70326
  • 1,000 pcs$0.69976

Hlutanúmer:
IPB039N10N3GE8187ATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 100V 160A TO263-7.
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Hong Kong
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Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Díóða - RF, Díóða - Bríta leiðréttingar, Thyristors - TRIACs, Transistors - Forritanleg sameining, Transistors - JFETs, Díóða - leiðréttingar - stakir and Transistors - FETs, MOSFETs - Arrays ...
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We specialize in Infineon Technologies IPB039N10N3GE8187ATMA1 electronic components. IPB039N10N3GE8187ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB039N10N3GE8187ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB039N10N3GE8187ATMA1 Vörueiginleikar

Hlutanúmer : IPB039N10N3GE8187ATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 100V 160A TO263-7
Röð : OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 160A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 3.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt : 3.5V @ 160µA
Hliðargjald (Qg) (Max) @ Vgs : 117nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 8410pF @ 50V
FET lögun : -
Dreifing orku (Max) : 214W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO263-7
Pakki / mál : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB