SI2319DDS-T1-GE3 Verðlagning (USD) [479744stk lager]
- 1 pcs$0.07710
- Hlutanúmer:
- SI2319DDS-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CHAN 40V.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Smára - tvíhverfa (BJT) - fylki, Transistors - JFETs, Díóða - Zener - Stakur, Transistors - IGBTs - Single, Díóða - breytileg getu, Transistors - FETs, MOSFETs - Arrays and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI2319DDS-T1-GE3 electronic components. SI2319DDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2319DDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2319DDS-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI2319DDS-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CHAN 40V
Röð :
TrenchFET® Gen III
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2.7A (Ta), 3.6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
75 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
650pF @ 20V
FET lögun :
-
Dreifing orku (Max) :
1W (Ta), 1.7W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3 (TO-236)
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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