SCT2H12NYTB Verðlagning (USD) [25402stk lager]
- 1 pcs$1.79360
- 400 pcs$1.78468
- Hlutanúmer:
- SCT2H12NYTB
- Framleiðandi:
- Rohm Semiconductor
- Nákvæm lýsing:
- 1700V 1.2 OHM 4A SIC FET.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - SCRs - mát, Thyristors - DIACs, SIDACs, Díóða - RF and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Rohm Semiconductor SCT2H12NYTB electronic components. SCT2H12NYTB can be shipped within 24 hours after order. If you have any demands for SCT2H12NYTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT2H12NYTB Vörueiginleikar
Hlutanúmer :
SCT2H12NYTB
Framleiðandi :
Rohm Semiconductor
Lýsing :
1700V 1.2 OHM 4A SIC FET
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
SiCFET (Silicon Carbide)
Afrennsli að uppspennu (Vdss) :
1700V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 1.1A, 18V
Vgs (th) (Max) @ kt :
4V @ 410µA
Hliðargjald (Qg) (Max) @ Vgs :
14nC @ 18V
Vgs (hámark) :
+22V, -6V
Inntaksrýmd (Ciss) (Max) @ Vds :
184pF @ 800V
FET lögun :
-
Dreifing orku (Max) :
44W (Tc)
Vinnuhitastig :
175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-268
Pakki / mál :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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