Framleiðandi :
Rohm Semiconductor
Lýsing :
1700V 1.2 OHM 4A SIC FET
Tækni :
SiCFET (Silicon Carbide)
Afrennsli að uppspennu (Vdss) :
1700V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 1.1A, 18V
Vgs (th) (Max) @ kt :
4V @ 410µA
Hliðargjald (Qg) (Max) @ Vgs :
14nC @ 18V
Inntaksrýmd (Ciss) (Max) @ Vds :
184pF @ 800V
Dreifing orku (Max) :
44W (Tc)
Vinnuhitastig :
175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-268
Pakki / mál :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA