[13421stk lager]
- Hlutanúmer:
- 2N6661JAN02
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 90V 0.86A TO-205.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - IGBTs - mát, Transistors - JFETs, Díóða - Zener - Stakur, Thyristors - SCR, Díóða - leiðréttingar - fylki and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix 2N6661JAN02 electronic components. 2N6661JAN02 can be shipped within 24 hours after order. If you have any demands for 2N6661JAN02, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N6661JAN02 Vörueiginleikar
Hlutanúmer :
2N6661JAN02
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 90V 0.86A TO-205
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
90V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
860mA (Tc)
Drifspenna (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 1A, 10V
Vgs (th) (Max) @ kt :
2V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
-
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
50pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
725mW (Ta), 6.25W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-39
Pakki / mál :
TO-205AD, TO-39-3 Metal Can
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