DMN2005UFG-7 Verðlagning (USD) [340920stk lager]
- 1 pcs$0.10849
- 2,000 pcs$0.09710
- Hlutanúmer:
- DMN2005UFG-7
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET N-CH 20V 18.1A POWERDI-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - IGBTs - Single, Transistors - sérstök tilgangur, Transistors - IGBTs - mát, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - Arrays and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMN2005UFG-7 electronic components. DMN2005UFG-7 can be shipped within 24 hours after order. If you have any demands for DMN2005UFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2005UFG-7 Vörueiginleikar
Hlutanúmer :
DMN2005UFG-7
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET N-CH 20V 18.1A POWERDI-8
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
18.1A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
4.6 mOhm @ 13.5A, 4.5V
Vgs (th) (Max) @ kt :
1.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
164nC @ 10V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
6495pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
1.05W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerDI3333-8
Pakki / mál :
8-PowerWDFN
Nýjustu fréttir
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