IPB027N10N5ATMA1 Verðlagning (USD) [35974stk lager]
- 1 pcs$1.08692
- 1,000 pcs$0.99717
- Hlutanúmer:
- IPB027N10N5ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 120A D2PAK-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Fylki, Díóða - Bríta leiðréttingar, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - Single, Thyristors - TRIACs, Kerfisstjóratæki, Transistors - sérstök tilgangur and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB027N10N5ATMA1 electronic components. IPB027N10N5ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB027N10N5ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB027N10N5ATMA1 Vörueiginleikar
Hlutanúmer :
IPB027N10N5ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 120A D2PAK-3
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
120A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt :
3.8V @ 184µA
Hliðargjald (Qg) (Max) @ Vgs :
139nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
10300pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
250W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263AB)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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