[2105stk lager]
- Hlutanúmer:
- TK12Q60W,S1VQ
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N CH 600V 11.5A IPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Thyristors - SCR, Transistors - IGBTs - Single, Díóða - Bríta leiðréttingar, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - sérstök tilgangur and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TK12Q60W,S1VQ electronic components. TK12Q60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK12Q60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12Q60W,S1VQ Vörueiginleikar
Hlutanúmer :
TK12Q60W,S1VQ
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N CH 600V 11.5A IPAK
Röð :
DTMOSIV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11.5A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
340 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ kt :
3.7V @ 600µA
Hliðargjald (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
890pF @ 300V
FET lögun :
Super Junction
Dreifing orku (Max) :
100W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
I-PAK
Pakki / mál :
TO-251-3 Stub Leads, IPak
Nýjustu fréttir
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