SIHB12N50E-GE3 Verðlagning (USD) [35558stk lager]
- 1 pcs$1.09960
- 10 pcs$0.99173
- 100 pcs$0.79681
- 500 pcs$0.61973
- 1,000 pcs$0.51349
- Hlutanúmer:
- SIHB12N50E-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 500V 10.5A TO-263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Díóða - breytileg getu, Transistors - Forritanleg sameining, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - IGBTs - mát, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHB12N50E-GE3 electronic components. SIHB12N50E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB12N50E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB12N50E-GE3 Vörueiginleikar
Hlutanúmer :
SIHB12N50E-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 500V 10.5A TO-263
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
500V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 6A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
886pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
114W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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