[13921stk lager]
- Hlutanúmer:
- ZXMNS3BM832TA
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET N-CH 30V 2A 8-MLP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki, Thyristors - TRIACs, Thyristors - SCR, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - Arrays, Kerfisstjóratæki and Thyristors - DIACs, SIDACs ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated ZXMNS3BM832TA electronic components. ZXMNS3BM832TA can be shipped within 24 hours after order. If you have any demands for ZXMNS3BM832TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMNS3BM832TA Vörueiginleikar
Hlutanúmer :
ZXMNS3BM832TA
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET N-CH 30V 2A 8-MLP
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ kt :
700mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
2.9nC @ 4.5V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
314pF @ 15V
FET lögun :
Schottky Diode (Isolated)
Dreifing orku (Max) :
1W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-MLP, MicroFET (3x2)
Pakki / mál :
8-VDFN Exposed Pad
Nýjustu fréttir
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