IPB072N15N3GATMA1 Verðlagning (USD) [29534stk lager]
- 1 pcs$1.39543
- Hlutanúmer:
- IPB072N15N3GATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 150V 100A TO263-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - SCR, Thyristors - DIACs, SIDACs, Thyristors - TRIACs and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB072N15N3GATMA1 electronic components. IPB072N15N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB072N15N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB072N15N3GATMA1 Vörueiginleikar
Hlutanúmer :
IPB072N15N3GATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 150V 100A TO263-3
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
150V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
8V, 10V
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt :
4V @ 270µA
Hliðargjald (Qg) (Max) @ Vgs :
93nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
5470pF @ 75V
FET lögun :
-
Dreifing orku (Max) :
300W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO263-3-2
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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