SQS966ENW-T1_GE3 Verðlagning (USD) [218486stk lager]
- 1 pcs$0.16929
- Hlutanúmer:
- SQS966ENW-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 60V.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Tvíhverfur (BJT) - RF, Kerfisstjóratæki, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Díóða - Bríta leiðréttingar and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQS966ENW-T1_GE3 electronic components. SQS966ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS966ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS966ENW-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQS966ENW-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 60V
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
36 mOhm @ 1.25A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
8.8nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
572pF @ 25V
Afl - Max :
27.8W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® 1212-8W
Birgir tæki pakki :
PowerPAK® 1212-8W
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