[4671stk lager]
- Hlutanúmer:
- SI7501DN-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N/P-CH 30V 5.4A 1212-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - RF, Díóða - leiðréttingar - fylki, Díóða - leiðréttingar - stakir, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI7501DN-T1-E3 electronic components. SI7501DN-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7501DN-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7501DN-T1-E3 Vörueiginleikar
Hlutanúmer :
SI7501DN-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N/P-CH 30V 5.4A 1212-8
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N and P-Channel, Common Drain
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.4A, 4.5A
Rds On (Max) @ Id, Vgs :
35 mOhm @ 7.7A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
14nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
Afl - Max :
1.6W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® 1212-8 Dual
Birgir tæki pakki :
PowerPAK® 1212-8 Dual
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