SIZF906ADT-T1-GE3 Verðlagning (USD) [122423stk lager]
- 1 pcs$0.30213
- Hlutanúmer:
- SIZF906ADT-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET DUAL N-CHAN 30V.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Díóða - Zener - Stakur, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - Single, Transistors - sérstök tilgangur, Transistors - IGBTs - mát, Smára - tvíhverfa (BJT) - fylki and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIZF906ADT-T1-GE3 electronic components. SIZF906ADT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF906ADT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF906ADT-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIZF906ADT-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET DUAL N-CHAN 30V
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual), Schottky
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
49nC @ 10V, 200nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
2000pF @ 15V, 8200pF @ 15V
Afl - Max :
4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerWDFN
Birgir tæki pakki :
8-PowerPair® (6x5)
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