SIR770DP-T1-GE3 Verðlagning (USD) [167720stk lager]
- 1 pcs$0.22053
- 3,000 pcs$0.20708
- Hlutanúmer:
- SIR770DP-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 30V 8A PPAK SO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - Single, Kerfisstjóratæki, Thyristors - SCR, Smára - tvíhverfa (BJT) - fylki, Díóða - Zener - Stakur and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIR770DP-T1-GE3 electronic components. SIR770DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR770DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIR770DP-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIR770DP-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 30V 8A PPAK SO-8
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
21 mOhm @ 8A, 10V
Vgs (th) (Max) @ kt :
2.8V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
21nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
900pF @ 15V
Afl - Max :
17.8W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® SO-8 Dual
Birgir tæki pakki :
PowerPAK® SO-8 Dual
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