[2533stk lager]
- Hlutanúmer:
- SQ2319ES-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 40V 4.6A TO-236.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - FETs, MOSFETs - Arrays, Díóða - Bríta leiðréttingar, Díóða - leiðréttingar - stakir, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQ2319ES-T1-GE3 electronic components. SQ2319ES-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SQ2319ES-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ2319ES-T1-GE3 Vörueiginleikar
Hlutanúmer :
SQ2319ES-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 40V 4.6A TO-236
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
75 mOhm @ 3A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
620pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
3W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3 (TO-236)
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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