Toshiba Semiconductor and Storage - TPN2R304PL,L1Q

KEY Part #: K6416859

TPN2R304PL,L1Q Verðlagning (USD) [335682stk lager]

  • 1 pcs$0.11746
  • 5,000 pcs$0.11688

Hlutanúmer:
TPN2R304PL,L1Q
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
MOSFET N-CH 40V 80A TSON.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
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Samkeppnisforskot:
We specialize in Toshiba Semiconductor and Storage TPN2R304PL,L1Q electronic components. TPN2R304PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN2R304PL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN2R304PL,L1Q Vörueiginleikar

Hlutanúmer : TPN2R304PL,L1Q
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : MOSFET N-CH 40V 80A TSON
Röð : U-MOSIX-H
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 40A, 10V
Vgs (th) (Max) @ kt : 2.4V @ 0.3mA
Hliðargjald (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 3600pF @ 20V
FET lögun : -
Dreifing orku (Max) : 630mW (Ta), 104W (Tc)
Vinnuhitastig : 175°C
Festingargerð : Surface Mount
Birgir tæki pakki : 8-TSON Advance (3.3x3.3)
Pakki / mál : 8-PowerVDFN

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