IPDD60R190G7XTMA1 Verðlagning (USD) [63114stk lager]
- 1 pcs$0.61952
- Hlutanúmer:
- IPDD60R190G7XTMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET NCH 650V 36A PG-HDSOP-10.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Díóða - RF, Thyristors - SCR, Transistors - IGBTs - mát, Transistors - sérstök tilgangur, Kerfisstjóratæki, Díóða - Zener - Fylki and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPDD60R190G7XTMA1 electronic components. IPDD60R190G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPDD60R190G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPDD60R190G7XTMA1 Vörueiginleikar
Hlutanúmer :
IPDD60R190G7XTMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET NCH 650V 36A PG-HDSOP-10
Röð :
CoolMOS™ G7
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
13A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 4.2A, 10V
Vgs (th) (Max) @ kt :
4V @ 210µA
Hliðargjald (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
718pF @ 400V
FET lögun :
-
Dreifing orku (Max) :
76W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-HDSOP-10-1
Pakki / mál :
10-PowerSOP Module
Nýjustu fréttir
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