[1979stk lager]
- Hlutanúmer:
- SIA850DJ-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 190V 0.95A SC70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Zener - Fylki, Díóða - breytileg getu, Díóða - leiðréttingar - stakir, Díóða - Zener - Stakur and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIA850DJ-T1-GE3 electronic components. SIA850DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA850DJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA850DJ-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIA850DJ-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 190V 0.95A SC70-6
Röð :
LITTLE FOOT®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
190V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
950mA (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
3.8 Ohm @ 360mA, 4.5V
Vgs (th) (Max) @ kt :
1.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
4.5nC @ 10V
Vgs (hámark) :
±16V
Inntaksrýmd (Ciss) (Max) @ Vds :
90pF @ 100V
FET lögun :
Schottky Diode (Isolated)
Dreifing orku (Max) :
1.9W (Ta), 7W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SC-70-6 Dual
Pakki / mál :
PowerPAK® SC-70-6 Dual
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