[1510stk lager]
- Hlutanúmer:
- SUP85N10-10P-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 100V 85A TO220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Kerfisstjóratæki, Thyristors - DIACs, SIDACs, Díóða - Zener - Stakur, Thyristors - SCR, Díóða - leiðréttingar - stakir, Transistors - IGBTs - mát and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SUP85N10-10P-GE3 electronic components. SUP85N10-10P-GE3 can be shipped within 24 hours after order. If you have any demands for SUP85N10-10P-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUP85N10-10P-GE3 Vörueiginleikar
Hlutanúmer :
SUP85N10-10P-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 100V 85A TO220AB
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
85A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4660pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
3.75W (Ta), 227W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
Nýjustu fréttir
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