RQ3E100BNTB Verðlagning (USD) [871993stk lager]
- 1 pcs$0.04689
- 3,000 pcs$0.04666
- Hlutanúmer:
- RQ3E100BNTB
- Framleiðandi:
- Rohm Semiconductor
- Nákvæm lýsing:
- MOSFET N-CH 30V 10A HSMT8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Zener - Fylki, Transistors - Forritanleg sameining, Thyristors - TRIACs, Díóða - RF, Transistors - IGBTs - mát and Transistors - Tvíhverfur (BJT) - Single ...
- Samkeppnisforskot:
- We specialize in Rohm Semiconductor RQ3E100BNTB electronic components. RQ3E100BNTB can be shipped within 24 hours after order. If you have any demands for RQ3E100BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E100BNTB Vörueiginleikar
Hlutanúmer :
RQ3E100BNTB
Framleiðandi :
Rohm Semiconductor
Lýsing :
MOSFET N-CH 30V 10A HSMT8
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1100pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
2W (Ta)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-HSMT (3.2x3)
Pakki / mál :
8-PowerVDFN
Nýjustu fréttir
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