DMN2013UFX-7 Verðlagning (USD) [297714stk lager]
- 1 pcs$0.12424
- Hlutanúmer:
- DMN2013UFX-7
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 10A 6-DFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki, Thyristors - SCRs - mát, Transistors - IGBTs - mát, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Single, Thyristors - SCR and Transistors - Tvíhverfur (BJT) - RF ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMN2013UFX-7 electronic components. DMN2013UFX-7 can be shipped within 24 hours after order. If you have any demands for DMN2013UFX-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2013UFX-7 Vörueiginleikar
Hlutanúmer :
DMN2013UFX-7
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET 2N-CH 20V 10A 6-DFN
Röð :
Automotive, AEC-Q101
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual) Common Drain
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10A (Ta)
Rds On (Max) @ Id, Vgs :
11.5 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ kt :
1.1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
57.4nC @ 8V
Inntaksrýmd (Ciss) (Max) @ Vds :
2607pF @ 10V
Afl - Max :
2.14W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-VFDFN Exposed Pad
Birgir tæki pakki :
W-DFN5020-6
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