IXFH7N100P Verðlagning (USD) [14573stk lager]
- 1 pcs$2.82783
- Hlutanúmer:
- IXFH7N100P
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Díóða - Zener - Fylki, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCR, Transistors - sérstök tilgangur and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in IXYS IXFH7N100P electronic components. IXFH7N100P can be shipped within 24 hours after order. If you have any demands for IXFH7N100P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH7N100P Vörueiginleikar
Hlutanúmer :
IXFH7N100P
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH
Röð :
HiPerFET™, Polar™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
1000V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.9 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ kt :
6V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
47nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
2590pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
300W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-247
Pakki / mál :
TO-247-3
Nýjustu fréttir
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