[12571stk lager]
- Hlutanúmer:
- IRF530NS
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 17A D2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - RF, Thyristors - SCR, Díóða - RF, Transistors - IGBTs - mát and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF530NS electronic components. IRF530NS can be shipped within 24 hours after order. If you have any demands for IRF530NS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF530NS Vörueiginleikar
Hlutanúmer :
IRF530NS
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 17A D2PAK
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
17A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
90 mOhm @ 9A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
920pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
3.8W (Ta), 70W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D2PAK
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nýjustu fréttir
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