[1596stk lager]
- Hlutanúmer:
- TK4A65DA(STA4,Q,M)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N-CH 650V 3.5A TO-220SIS.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Díóða - leiðréttingar - fylki, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Díóða - leiðréttingar - stakir, Díóða - Zener - Stakur, Díóða - RF and Transistors - Tvíhverfur (BJT) - RF ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TK4A65DA(STA4,Q,M) electronic components. TK4A65DA(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK4A65DA(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK4A65DA(STA4,Q,M) Vörueiginleikar
Hlutanúmer :
TK4A65DA(STA4,Q,M)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N-CH 650V 3.5A TO-220SIS
Röð :
π-MOSVII
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.5A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.9 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ kt :
4.4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
600pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
35W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220SIS
Pakki / mál :
TO-220-3 Full Pack
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