Infineon Technologies - IPB80N04S306ATMA1

KEY Part #: K6419779

IPB80N04S306ATMA1 Verðlagning (USD) [131780stk lager]

  • 1 pcs$0.28067
  • 1,000 pcs$0.26729

Hlutanúmer:
IPB80N04S306ATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 40V 80A TO263-3.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Transistors - Tvíhverfur (BJT) - Single, Díóða - breytileg getu, Thyristors - DIACs, SIDACs, Kerfisstjóratæki, Díóða - leiðréttingar - stakir, Transistors - JFETs and Díóða - Bríta leiðréttingar ...
Samkeppnisforskot:
We specialize in Infineon Technologies IPB80N04S306ATMA1 electronic components. IPB80N04S306ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80N04S306ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80N04S306ATMA1 Vörueiginleikar

Hlutanúmer : IPB80N04S306ATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 40V 80A TO263-3
Röð : OptiMOS™
Hluti staða : Not For New Designs
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.4 mOhm @ 80A, 10V
Vgs (th) (Max) @ kt : 4V @ 52µA
Hliðargjald (Qg) (Max) @ Vgs : 47nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 3250pF @ 25V
FET lögun : -
Dreifing orku (Max) : 100W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO263-3-2
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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