TP65H050WS Verðlagning (USD) [5775stk lager]
- 1 pcs$7.13493
- Hlutanúmer:
- TP65H050WS
- Framleiðandi:
- Transphorm
- Nákvæm lýsing:
- GANFET N-CH 650V 34A TO247-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Díóða - Zener - Stakur, Díóða - Bríta leiðréttingar and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Transphorm TP65H050WS electronic components. TP65H050WS can be shipped within 24 hours after order. If you have any demands for TP65H050WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TP65H050WS Vörueiginleikar
Hlutanúmer :
TP65H050WS
Framleiðandi :
Transphorm
Lýsing :
GANFET N-CH 650V 34A TO247-3
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
GaNFET (Gallium Nitride)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
34A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
12V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 22A, 10V
Vgs (th) (Max) @ kt :
4.8V @ 700µA
Hliðargjald (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1000pF @ 400V
FET lögun :
-
Dreifing orku (Max) :
119W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-247-3
Pakki / mál :
TO-247-3
Nýjustu fréttir
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