DMN2013UFDE-7 Verðlagning (USD) [434437stk lager]
- 1 pcs$0.08514
- 3,000 pcs$0.07620
- Hlutanúmer:
- DMN2013UFDE-7
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET N-CH 20V 10.5A U-DFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Transistors - IGBTs - mát, Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - Single, Thyristors - SCRs - mát, Díóða - Zener - Fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMN2013UFDE-7 electronic components. DMN2013UFDE-7 can be shipped within 24 hours after order. If you have any demands for DMN2013UFDE-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2013UFDE-7 Vörueiginleikar
Hlutanúmer :
DMN2013UFDE-7
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET N-CH 20V 10.5A U-DFN
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10.5A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ kt :
1.1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
25.8nC @ 8V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
2453pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
660mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
U-DFN2020-6 (Type E)
Pakki / mál :
6-UDFN Exposed Pad
Nýjustu fréttir
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